• 专利附录
  • 专利说明
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    • 专利摘要:
    An electrical insulation layer 101 and vias 103 connected between the wirings 102 and 106 integrated on both surfaces of the electrical insulation layer 101 and the wirings 102 and 106. At least one component 104 selected from an electronic component and a semiconductor is embedded in the component 101. At least one side of the wiring (102, 106) consists of a wiring (106) formed on the surface of the wiring board (109), and the component (104) embedded in the electrical insulation layer (101) is embedded before the wiring. It is mounted on and integrated with the substrate 109. Thereby, the component inspection, such as a semiconductor, can be carried out and a characteristic inspection can be carried out before built-in. As a result, the yield can be improved. Moreover, since the wiring board is integrated and embedded, the strength can be increased.
    公开号:KR20030032892A
    申请号:KR1020020063874
    申请日:2002-10-18
    公开日:2003-04-26
    发明作者:아사히도시유키；스가야야스히로；고마츠신고；야마모토요시유키；나카타니세이이치
    申请人:마쯔시다덴기산교 가부시키가이샤；
    IPC主号:
    专利说明:

    Component built-in module and its manufacturing method {COMPONENT EMBEDDED MODULE AND MANUFACTURING METHOD THEREOF}
    [18] The present invention relates to a circuit component embedded module and a method of manufacturing the circuit component in which the circuit component is disposed inside the electrical insulation layer.
    [19] In the recent trend of high performance and miniaturization of electronic devices, higher density and higher functionality of circuit components are required. Modules equipped with circuit components are also required to respond to high density and high functionality. As a method of mounting a circuit component at a high density, there exists a tendency for a wiring board to multilayer at present. In a conventional glass cross-epoxy resin-impregnated substrate, multilayering is carried out using a through-hole structure by a drill, and although the reliability is high, it is not suitable for high density mounting. For this reason, the multilayer wiring board using the connection by internal via is also used as a method which can achieve the highest density of a circuit. By internal via connection, the wiring pattern between LSI and components can be connected in the shortest distance, and only the required each layer connection is possible, and it is excellent also in the mountability of a circuit component. Further, the miniaturization of wiring patterns is also an indispensable technique for high-density packaging, and line and space have been decreasing year by year. In addition, three-dimensional mounting in which passive components are formed inside a substrate has been developed.
    [20] However, in order to form a passive component inside a board | substrate, there are many subjects, such as material development, formation precision, equipment investment, and development speed also becomes slow.
    [21] In addition, the present applicant has already proposed to embed a passive component inside a substrate (Japanese Patent Laid-Open No. 11 (1999) -220262, US Patent No. 6,038,133). However, according to the embodiment of this proposal, since wiring is formed after the component is embedded in the substrate, there is a problem that mounting inspection of a component such as a semiconductor or inspection cannot be carried out before embedding. Moreover, since the wiring board is not integrated and embedded, there is a problem that the strength is not so high.
    [22] In order to solve the above-mentioned conventional problems, the present invention can mount or inspect a component such as a semiconductor prior to embedding, improve the yield, increase the strength, increase productivity, and embed high-density components. The purpose is to provide a module.
    [23] In order to achieve the above object, the component built-in module of the present invention includes an electrical insulation layer, wirings integrated on both surfaces of the electrical insulation layer, and vias connecting the wirings. A component built-in module in which at least one component selected from an electronic component and a semiconductor is embedded, wherein at least one of the wirings is a wiring formed on the surface of the wiring board, and the components embedded in the electrical insulation layer are inserted before being embedded. It is mounted on a wiring board and integrated.
    [24] Moreover, the manufacturing method of the component built-in module of this invention includes an electrical insulation layer, the wiring integrated in the both surfaces of the said electrical insulation layer, and the via which connects the said wiring, The electronics inside the said electrical insulation layer A method for manufacturing a component built-in module in which at least one component selected from a component and a semiconductor is embedded, wherein at least one of the wirings comprises wirings formed on the surface of the wiring board, wherein the wiring board is selected from semiconductors and electronic components. At least one component is mounted, a via is formed in the thickness direction of the electrical insulating layer made of a thermosetting resin in a semi-cured state, the component is embedded in the electrical insulating layer with the wiring board facing outward, and the electrical insulating layer It characterized in that it comprises curing.
    [1] 1 is a cross-sectional view of a component built-in module according to the first embodiment of the present invention;
    [2] 2A to 2E are cross-sectional views of the manufacturing steps of the component built-in module according to the second embodiment of the present invention;
    [3] 3 is a cross-sectional view of a component built-in module according to the third embodiment of the present invention;
    [4] 4 is a cross-sectional view of a component built-in module according to the fourth embodiment of the present invention;
    [5] 5 is a sectional view of a component built-in module according to the fifth embodiment of the present invention;
    [6] 6 is a sectional view of the manufacturing process of the component built-in module according to the sixth embodiment of the present invention;
    [7] 7A to 7C are cross-sectional views of component built-in modules according to the seventh embodiment of the present invention;
    [8] 8 is a sectional view of a component built-in module according to the eighth embodiment of the present invention;
    [9] 9 is a sectional view of a component built-in module according to a ninth embodiment of the present invention;
    [10] 10 is a sectional view of a component built-in module according to a tenth embodiment of the present invention;
    [11] 11 is a sectional view of the manufacturing process of the component built-in module according to the eleventh embodiment of the present invention;
    [12] It is sectional drawing of the manufacturing process of the component built-in module in Embodiment 12 of this invention.
    [13] <Description of the symbols for the main parts of the drawings>
    [14] 101: electrical insulation layer 102, 106, 108: wiring pattern
    [15] 103: Via 104: Parts
    [16] 105: solder 107: internal via
    [17] 109: double-sided board
    [25] The present invention includes an electrical insulation layer, at least one wiring selected from wiring patterns on both main planes of the electrical insulation layer and a wiring board, and vias for connecting the wirings, At least one component selected from an electronic component and a semiconductor is embedded. At least one of the wirings is a wiring board, and components embedded in the electrical insulation layer are mounted on and integrated with the wiring board before being embedded. Thereby, the component inspection, such as a semiconductor, can be carried out and a characteristic inspection can be carried out before built-in. As a result, the yield can be improved. Moreover, since the wiring board is integrated and embedded, the strength can be increased. Moreover, a module with a built-in component which is highly fishy and which can be mounted at high density can be provided. In the above, embedding a part means completely embedding the inside of the electrical insulation layer.
    [26] In this invention, it is preferable that the said wiring board is a double-sided board or a multilayer wiring board. This facilitates the formation of complicated circuits.
    [27] Moreover, in this invention, it is preferable to mount the electronic component and / or semiconductor (henceforth generically called a "component") in the said electrical insulation layer in the wiring pattern and / or wiring board of both main planes of the said electrical insulation layer. By mounting components on both main planes and embedding them in the electrical insulation layer, a module having a higher density of the component embedded layer can be provided.
    [28] Moreover, in this invention, it is preferable to arrange | position the said component away from the normal line direction with respect to the main plane of the said electrical insulation layer. Thereby, a component can be arrange | positioned with high density from the component mounting space | interval of a mounting machine. Moreover, the thickness of an electrical insulation layer can be reduced and it leads to high density.
    [29] Moreover, it is preferable to arrange | position a shield layer between the wiring pattern of both main planes of the said electrical insulation layer, and / or the components mounted in the wiring board, arrange | positioned inside the said electrical insulation layer. As a result, any one or all of the interference between the built-in components, the interference from the outside of the built-in components, and the radiation from the built-in components to the outside can be reduced, and the characteristics of the module can be improved.
    [30] Moreover, it is preferable that the said shield layer is a metal foil wiring pattern, or an electron shield material. When a metal foil wiring pattern is used, a shield layer can be formed by the same process as formation of a wiring pattern, and production is easy. When the electromagnetic shielding material is used, it can be produced only by changing the material of the electrical insulation layer, and the interference can be reduced without changing the process.
    [31] Moreover, it is preferable to mount a component in the main plane on the opposite side to the said electrical insulation layer of the said wiring pattern and / or a wiring board. Thereby, the component can be mounted not only in the electrical insulation layer but also in the main plane on the opposite side, and the density can be increased.
    [32] In addition, it is preferable that the electronic component is a discrete component. As a result, it is not necessary to newly develop components to be embedded, and the development speed of the module itself is improved. Moreover, the reliability and precision of the existing discrete components can be utilized, and the characteristics of the module are improved. As described above, the discrete component refers to a general-purpose chip component such as inductance, capacitance, and resistance. In the following, inductance, capacitance and resistance are collectively referred to as "LCR".
    [33] Moreover, it is preferable that the said semiconductor is a semiconductor bare chip. Thereby, a module can be formed in a lower area compared with a semiconductor package, and a high density module can be provided.
    [34] In addition, it is preferable that the semiconductor bare chip is flip chip bonded to the wiring pattern and / or the wiring board. As a result, single wiring and high density mounting can be achieved.
    [35] In addition, it is preferable that the semiconductor bare chip is ground and / or polished. Thereby, the thickness of a semiconductor can be reduced and it is effective in the low magnification of a module.
    [36] In the said manufacturing method, it is preferable to include the process of mounting a component in a wiring pattern and / or a wiring board after the process of hardening the said electrical insulation layer. Thereby, the component built-in module of this invention can be manufactured efficiently.
    [37] Moreover, it is preferable to grind and / or grind to a semiconductor wafer before mounting the said semiconductor. As a result, the thinning of the semiconductor can be performed collectively on the wafer, and the productivity can be improved.
    [38] Moreover, it is preferable to grind and / or grind after wiring of the said semiconductor using a wiring board for fixation and conveyance. Thereby, the component built-in module of this invention can be manufactured, without handling a thin semiconductor.
    [39] Moreover, it is preferable to perform the process of embedding the said component in an electrical insulation layer, and the process of hardening the said electrical insulation layer simultaneously. Thereby, the number of processes can be reduced and the component built-in module of this invention can be manufactured.
    [40] Moreover, it is preferable to perform the process of forming the said shield layer by forming a copper foil wiring pattern. Thereby, the component built-in module of this invention can be manufactured efficiently.
    [41] Moreover, it is preferable to perform the process of forming the said shield layer by laminating | stacking an electron shield layer. Thereby, the component built-in module of this invention can be manufactured efficiently.
    [42] Moreover, in this invention, you may arrange | position a component in the said electrical insulation layer in opposition. In particular, in the case where a part with a high height and a part with a low height are mixed, when the parts with the low height are disposed to face each other, it can be filled with high density.
    [43] In addition, the thermal expansion coefficient in the thickness direction of the electrical insulation layer may be 10 times or less of the thermal expansion coefficient of the via. In this case, when the component is further mounted on the outside of the component built-in module, even if the solder reflow step passes, for example, the expansion ratio in the thickness direction of the electrical insulation layer is not so great that the conduction of the via is not broken.
    [44] (Embodiment 1)
    [45] EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described with reference to drawings. 1 is a cross-sectional view of a component built-in module in this embodiment. In FIG. 1, the component embedded module has an electrical insulation layer 101, a wiring pattern 102, a via 103, a component 104, and a solder 105, and further includes wiring patterns 106 and 108. ) And a double sided substrate 109 having internal vias 107.
    [46] The electrical insulation layer 101 can use, for example, an insulating resin, a mixture of a filler and an insulating resin, and the like. It is preferable that an electrical insulation layer contains resin and a filler, and content of a filler is 50 mass% or more and 95 mass% or less. Moreover, there may be reinforcing materials such as glass cross. A thermosetting resin, a thermoplastic resin, a photocurable resin, etc. can be used as insulating resin, and the heat resistance of the electrical insulation layer 101 can be improved by using the epoxy resin, phenol resin, and isocyanate resin with high heat resistance. It also contains a low dielectric loss tangent fluorine resin, for example, polytetrafluoroethylene (PTFE resin), PPO (polyphenylene oxide) resin (also called PPE (polyphenylene ether) resin), liquid crystal polymer or By using the resin which modified | denatured resin, the high frequency characteristic of an electrical insulation layer improves. When a mixture of a filler and an insulating resin is used as the electric insulating layer 101, by selecting a filler and an insulating resin, the linear expansion coefficient, thermal conductivity, dielectric constant, and the like of the electric insulating layer 101 can be easily controlled. For example, aluminum, magnesia, boron nitride, aluminum nitride, silicon nitride, polytetrafluoroethylene, silica and the like can be used as the filler. By using aluminum, boron nitride, and aluminum nitride, a substrate having a higher thermal conductivity than that of a conventional glass epoxy substrate can be produced, and the heat generated by the embedded electronic component 104 can be effectively dissipated. In addition, aluminum has the advantage that the cost is low. In the case of using silica, the electrical insulation layer 101 having a low dielectric constant can be obtained and the specific gravity is also light, which is preferable for high frequency applications such as mobile phones. Silicon nitride or polytetrafluoroethylene, for example, "Teflon" (registered trademark of DuPont) can also be used to form an electrical dielectric layer having a low dielectric constant. Moreover, the linear expansion coefficient can be reduced by using boron nitride. Moreover, you may contain a dispersing agent, a coloring agent, a coupling agent, or a mold release agent. The filler in insulating resin can be disperse | distributed uniformly with a dispersing agent. Since the electrical insulation layer can be colored by the colorant, the use of the automatic recognition device becomes easy. Since the adhesive strength of insulating resin and a filler can be made high by a coupling agent, the insulation of the electrical insulation layer 101 can be improved. Since the mold release agent can improve the mold release property of a metal mold | die and a mixture, productivity can be improved.
    [47] The wiring pattern 102 is made of a material having electrical conductivity. For example, a lead frame obtained by processing a metal foil, a conductive resin composition, or a metal plate can be used. By using metal foil or a lead frame, preparation of a fine wiring pattern by etching etc. becomes easy. Moreover, in metal foil, formation of the wiring pattern by transfer etc. using a release film also becomes possible. Copper foil is especially preferable because of its low cost and high electrical conductivity. Moreover, wiring pattern becomes easy to handle by forming wiring pattern on a release film. Moreover, preparation of the wiring pattern by screen printing etc. becomes possible by using a conductive resin composition. By using the lead frame, a thick metal having a low electrical resistance can be used. In addition, a simple production method such as fine patterning or punching by etching can be used. Moreover, these wiring patterns 102 can improve corrosion resistance and electrical conductivity by plating on the surface. Moreover, adhesiveness with the electrical insulation layer 101 can be improved by making the contact surface of the electrical insulation layer 101 of the wiring pattern 102 rough. Moreover, it is also possible to form a coupler, a filter, etc. in a wiring pattern. The wiring pattern 102 may also mount semiconductors and / or electronic components on the surface layer side.
    [48] The via 103 has a function of connecting the wiring patterns 102 and is made of, for example, a thermosetting conductive material. As a thermosetting electroconductive substance, the electrically conductive resin composition which mixed metal particle and a thermosetting resin can be used, for example. Gold, silver, copper, nickel, or the like can be used as the metal particles. Gold, silver, copper or nickel is preferred because of its high conductivity, and copper is particularly preferred because of its high conductivity and low migration. Even when metal particles coated with silver are used, the characteristics of both reduction in migration and increase in conductivity can be satisfied. As a thermosetting resin, an epoxy resin, a phenol resin, or an isocyanate resin can be used, for example. Epoxy resins are particularly preferred because of their high heat resistance. The via 104 can also be formed by plating after the via hole is formed. Moreover, you may form with the combination of a metal and a solder.
    [49] As the electronic component 104, for example, a chip component such as a capacitor, an inductor, a resistor (LCR), a diode, a thermistor, a switch, or the like can be used. By embedding the discrete components, there is no need to develop new internal components. In addition, the components according to the application such as precision and temperature characteristics can use existing components, leading to an improvement in reliability. Moreover, you may form a printing resistor, a thin film capacitor, an inductor, etc.
    [50] The solder 105 is used to mount the electronic component 104 on the wiring pattern 102. When high temperature solder is used, remelting of the solder when mounting the module by reflow can be prevented. In addition, the use of lead-free solder can reduce the load on the environment. In the present embodiment, solder is used, but a conductive adhesive or the like may be used.
    [51] As the double-sided substrate 109, a glass cloth impregnated with an epoxy resin (glass-epoxy substrate), an aramid fiber nonwoven fabric with an epoxy resin impregnated (aramid-epoxy substrate), a paper impregnated with a phenol resin (paper- Phenol substrates), ceramic substrates and the like can be selected and used according to the purpose.
    [52] For example, by mounting a component on a double-sided substrate using a glass-epoxy substrate and inspecting it, thereafter, the component built-in module (Embodiment 1) embedded in the electrical insulation layer and the component are electrically integrated without using the substrate. Comparing the strength with the module embedded in the insulating layer and then forming the wiring pattern on the surface, it is also different depending on the type of substrate, the type, amount, thickness, etc. of the ceramic of the composite, but on average, The flexural strength is about 1.3 times higher.
    [53] (Embodiment 2)
    [54] In Embodiment 2, an embodiment of a manufacturing method of a component built-in module shown in FIG. 1 will be described. The material used in the second embodiment is described in the first embodiment. 2A-2D are sectional views showing one embodiment of a manufacturing process of a component built-in module. As shown in FIG. 2A, a through hole 207 is formed in the uncured electrical insulating layer 201. As the electrical insulation layer 201, an insulating resin, a mixture of a filler and an insulating resin, or the like can be used. First, the filler and insulating resin are mixed and stirred to prepare a paste-shaped insulating resin mixture. In order to adjust a viscosity, you may add a solvent to insulating resin mixture. The electrical insulating layer 201 can be formed by molding this insulating resin mixture into a sheet shape. As a method of shape | molding in a sheet form, it can create on a filler by using the doctor blade method etc., for example. The electrical insulation layer 201 can reduce the adhesiveness by drying below the curing temperature. By this heat processing, since the adhesiveness of a plate-shaped electrical insulation layer is lost, peeling with a film becomes easy. By setting it to the semi-hardened state (B stage), handling becomes easy. Formation of the through hole 207 can be produced, for example, by laser processing, drill processing, or punching processing. Laser processing is preferred because it can form vias at a fine pitch and no cutting debris occurs. In the case of laser processing, a carbon gas laser, a YAG laser, an excimer laser, etc. can be used. In addition, in the case of drill processing and punching processing, through-hole formation is easy in existing facilities with universal versatility. Processing becomes easy by using the electrical insulation layer 201 of an unhardened state.
    [55] In particular, what formed the wiring pattern 202 on the carrier 206 is prepared. The wiring pattern 202 can be formed using a method such as etching and printing. In particular, a method of forming a fine wiring pattern such as a photolithography method can be used for etching. As a carrier, besides the resin film like PET (polyethylene terephthalate) and PPS (polyphenylene sulfide), metal foil, such as copper foil and aluminum foil, can be used. By using the carrier 206, the handling of the wiring pattern 202 becomes easy. In addition, a peeling layer may be provided between the wiring pattern 202 and the carrier 206 so as to easily peel off the wiring pattern 202.
    [56] The component 204 is mounted by the solder 205 on the wiring pattern 208 on the double-sided wiring board 211 having the wiring patterns 208 and 210 and the internal vias 209 connecting therebetween. At least one inspection selected from the implementation inspection and the characteristic inspection is completed. The protective film 212 may be covered under the wiring pattern 210.
    [57] Next, the conductive via paste is filled in the through hole 207 created in FIG. 2A. As the conductive via paste, a mixture of conductive powder and resin, for example, metal powder such as gold, silver, copper and nickel, carbon powder, and a mixture of thermosetting resin and photocurable resin can be used. When copper is used, since electroconductivity is high and there is little migration, it is preferable. Moreover, you may use the electroconductive powder which coated the powder with copper. As the resin, thermosetting resins such as epoxy resins, phenol resins, isocyanate resins, polyphenylene ethers and the like can be used. Epoxy resins are particularly preferred because of their high heat resistance. Moreover, photocurable resin can also be used. For filling the via paste, a method by printing or injection can be used. In particular, in the case of printing, the wiring pattern can also be formed. By forming the vias 203, the connection between the wiring patterns 202 and 208 can be made. Moreover, you may form the space of the electronic component 204 built in the electrical insulation layer 201. As shown in FIG. Deformation of the via 203 can be suppressed by forming a space.
    [58] As a method of mounting the electronic component 204 on the wiring pattern 208 on the double-sided wiring board 211 having the wiring patterns 208 and 210 and the internal vias 209 connecting therebetween, the solder 205 In addition to solder mounting (printing of solder solder or solder balls), conductive adhesives such as gold, silver, copper, silver-paradium alloys, and the like may also be mixed and mixed with a thermosetting resin. Moreover, you may inject sealing resin between the mounted electronic component 204 and the double-sided wiring board 211. By injecting the sealing resin, it is possible to prevent the gap from occurring when the electronic component 204 is embedded in the electrical insulation layer 201 in a later step. The underfill resin used for normal flip chip bonding can be used for sealing resin. After the mounting, by checking the mounting state, the cause of repair or failure can be analyzed.
    [59] An electrical insulating layer 201 having vias 203 filled with conductive via pastes is disposed in the center, a wiring pattern 202 formed on the carrier film 206 is disposed on the upper side, and an electronic component 204 on the lower side. ), A double-sided substrate 211 is mounted, and these are stacked in a position as shown in Fig. 2B.
    [60] After lamination of FIG. 2B, as shown in FIG. 2C, by pressing, the electronic component 204 can be embedded in the electrical insulation layer 201. In the case where a thermosetting resin is used for the insulating resin, the thermosetting resin in the electrical insulating layer 201 can be cured by heating after pressurization to form a plate-shaped electrical insulating layer 201 in which the electronic component 204 is embedded. . Heating is performed at a temperature equal to or higher than the temperature at which the thermosetting resin is cured. By this process, the electrical insulation layer 201 and the electronic component 204 are mechanically and firmly adhere | attached. In addition, when hardening a thermosetting resin by heating, the mechanical strength of a semiconductor device can be improved by pressing at the pressure of 100 g / mm <2> -2 kg / mm <2>, heating. Moreover, it can also melt and flow to a metal mold | die after processing into powder or a pellet form, without using a sheet-shaped electrical insulation layer. Moreover, after making it flow as a powder, it can also melt-mold. As a method of injecting an insulating resin layer, transfer mold or injection molding can be used.
    [61] After hardening of the electrical insulation layer 201, the carrier 206 is peeled off and it becomes the electrical insulation layer 201 which embedded the electronic component 204, and as demonstrated in Embodiment 1, the double-sided board 211 is integrated. One semiconductor device can be formed.
    [62] (Embodiment 3)
    [63] In the third embodiment, an embodiment of a component built-in module will be described. EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described with reference to FIG. The component built-in module in this embodiment is the same as that of Embodiment 1 mentioned above except the semiconductor 306, the bump 307, and the three-layer wiring board 308. Therefore, the material used in Embodiment 3 is the same as Embodiment 1, 2 unless there is particular notice. In FIG. 3, the component embedded module includes an electrical insulation layer 301, a wiring pattern 302, a via 303, an electronic component 304, a conductive adhesive 305, a semiconductor 306, and a bump 307. ) And a wiring board 308.
    [64] The semiconductor 306 is mounted on the wiring board 308 in the same manner as the electronic component 304. By incorporating the semiconductor 306 into the electrical insulating layer 301, the module can be highly functionalized. The semiconductor 306 can use semiconductor elements, such as a transistor, IC, and LSI, for example. The semiconductor 306 may be a package or a semiconductor bare chip. In addition, the semiconductor 306 may encapsulate the semiconductor 306 or at least a portion of the connection portion between the semiconductor 306, the bump 307, and the wiring board 308 using a sealing resin. Injection of sealing resin can prevent the gap between the semiconductor 303 and the wiring board 308 when the semiconductor 306 is embedded in the electrical insulating layer 301. The underfill resin used for normal flip chip bonding can be used for sealing resin. A conductive adhesive, an anisotropic conductive film (ACF), a non-conductive film (NCF), and bumps are used for the connection between the wiring board 308 and the semiconductor 306, for example, as flip chip bonding. Moreover, mounting becomes easy by using a chip size package (CSP).
    [65] The bump 307 connects the semiconductor 306 and the wiring board 308. For example, metals such as gold, silver and solder can be used. The bump 307 can be formed by wire bonding, plating, printing, or the like.
    [66] The wiring board 308 is a double-sided board made of a glass epoxy board or a ceramic board, which is a general wiring board, a multi-layer board of a build-up board, or an internal via connection. The wiring board 308 is composed of an electrical insulating layer, wiring patterns, and vias. The electrical insulation layer may contain reinforcing agents, such as insulating resin, a mixture of filler and insulating resin, ceramics, and glass cross. Moreover, the same material as Embodiment 1, 2 may be sufficient. The same applies to wiring patterns and vias. By using the same material as the electrical insulation layer 301, the coefficient of thermal expansion and the like become the same value, and the reliability is improved. Moreover, the mounting state of the wiring board 308, the semiconductor 306, and the electronic component 304 is checked before it is embedded in an electrical insulation layer. Thereby, the yield of a product becomes high and the cause analysis of a repair and a defect can be performed. When the electronic component 304 and the semiconductor 306 are checked after both mounting, the operation | movement of the semiconductor 306 can be confirmed and it is effective. The wiring board 308 facilitates the adaptation to complicated circuits, the rewiring of semiconductors, and the like, and forms a structure suitable for modules having complex functions.
    [67] In addition, in this embodiment, although the wiring pattern of the wiring board was three layers, arbitrary number of layers can be used, without limiting the number of layers.
    [68] For example, the component is mounted on a three-layer substrate using a glass-epoxy substrate, inspected, and thereafter, the component-embedded module (Embodiment 3) embedded in the electrical insulation layer and the component are integrated without using the substrate. Comparing the strength of the module embedded in the electrically insulating layer and then forming the wiring pattern on the surface, the degree of flexural strength is the third embodiment on the average, although it also varies depending on the type of substrate, the type, amount, and thickness of the ceramic of the composite. Is about 1.3 times higher.
    [69] (Embodiment 4)
    [70] In Embodiment 4, one Embodiment of a component built-in module is described. EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described with reference to FIG. The component built-in module in this embodiment is the same as that of Embodiments 1-3 mentioned above except that the electronic component 304 and the semiconductor 306 are disposed to face each other using the three-layer wiring board 408 on both surfaces. . Therefore, in this embodiment, the thing which does not have description in particular is the same as that of Embodiment 1-3, and has the same function unless there is particular notice about the structural member and manufacturing method of the same name.
    [71] Unlike the third embodiment, the wiring board 408 is arranged on both sides of the wiring board 408 to facilitate adaptation to complicated circuits, rewiring of semiconductors, and the like, thereby forming a structure suitable for a module having a complicated function. Moreover, a high density component built-in module can be formed only by adding the process which embeds a semiconductor and an electronic component after the process of mounting a semiconductor and an electronic component in the wiring board in normal module preparation.
    [72] (Embodiment 5)
    [73] In the fifth embodiment, an embodiment of a component built-in module will be described. EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described with reference to FIG. The component built-in module in this embodiment is the same as that of Embodiments 1-4 mentioned above except the point regarding the electronic component 510, the semiconductor 506, and the component built-in layer mounted on the surface layer. Therefore, in this embodiment, it is the same as that of Embodiments 1-4 about the thing which does not have description, and has the same function unless there is particular description about the structural member and manufacturing method of the same name.
    [74] Although the electronic component 504 in the electrical insulation layer 501 is mounted in the mounting process in normal module creation similarly to Embodiment 4, in view of the function of the mounter which mounts the electronic component 504, an electronic component and an electronic component are necessarily. You need to install a gap between. In this embodiment, the mounting space | interval of a component is considered in the opposing wiring board 508, and is arrange | positioned outside the position of the electronic component 504. Thereby, the number of parts which can be mounted in the same area increases, and the thickness of a built-in layer can be made thin and it can be set as the structure suitable for higher density mounting. 509 is an NCF.
    [75] The surface-mounted electronic component 510 and the semiconductor 506 can be mounted in the same process as a normal module making, and by mounting a mounting surface, it can be mounted more densely and becomes a structure suitable for a multifunctional module.
    [76] (Embodiment 6)
    [77] In the sixth embodiment, an embodiment of a component built-in module will be described. EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described with reference to FIG. The component built-in module in this embodiment is the same as that of Embodiments 1 to 5 described above except for the electronic components 610 and 612 and the semiconductors 611 and 613 of the surface mount and the component embedded layer. Therefore, in this embodiment, the thing which does not have description in particular is the same as that of Embodiment 1-5, and has the same function unless there is particular notice about the structural member and manufacturing method of the same name.
    [78] Although the electronic component 604 and the semiconductor 606 in the electrical insulation layer 601 are mounted in the normal mounting process in the module preparation similarly to Embodiments 4 and 5, when the semiconductor 606 is subjected to flip chip mounting, Since space for rewiring is required, it is difficult to arrange electronic components in close proximity. In this embodiment, the electronic component 604 is mounted on the opposing wiring board 608, thereby making it possible to arrange the semiconductor 606 in close proximity. Thereby, the number of parts which can be mounted in the same area can be increased and it can be set as the structure suitable for higher density mounting. 609 is a sealing resin.
    [79] The electronic component 610 and the semiconductor 606 mounted on the surface layer can be mounted in the same process as that of making a normal module. By mounting on both surface layers, it can mount more densely and it becomes the structure suitable for a multifunctional module.
    [80] (Embodiment 7)
    [81] In the seventh embodiment, an embodiment of a manufacturing method of a component built-in module shown in FIG. 6 will be described. EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described with reference to FIG. 7A-C. The material used in Embodiment 7 is the same as that of embodiment mentioned above about the thing which does not have description, and has the same function unless there is particular notice about the structural member and manufacturing method of the same name. 7A to 7C are cross-sectional views showing one embodiment of a manufacturing process of a component built-in module. As shown in FIG. 7A, the semiconductor 706, the wiring board 708 on which the electronic component 704 is mounted, the vias 703, and the electrical insulation layer 701 on which the voids 710 are formed are laminated in position. After mounting, the wiring board 708 may be mounted and checked for repair. The gap 710 formed in the electrical insulation layer 701 is equal to or less than the volume of the semiconductor 706 and the electronic component 704 embedded therein, so that the gap can be prevented from being built.
    [82] Next, as shown in FIG. 7B, the semiconductor 706 and the electronic component 704 can be embedded in the electrical insulation layer 701 by pressing after lamination. After embedding, it is heated to cure the electrical insulation layer 701. The via pattern 702 is connected via a via 703.
    [83] After hardening the electrical insulation layer 701, as shown in FIG. 7C, by mounting the semiconductors 711 and 713 and the electronic components 714 and 712 on the surface layer, a component built-in module can be provided.
    [84] (Embodiment 8)
    [85] In the eighth embodiment, an embodiment of a component built-in module will be described. EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described with reference to FIG. The component built-in module in this embodiment is the same as that of Embodiments 1-7 mentioned above except the component built-in layer. Therefore, in this embodiment, the thing which does not have description in particular is the same as that of Embodiment 1-7, and the structural member and manufacturing method of the same name have the same function unless there is particular notice.
    [86] Although the electronic component 804 and the semiconductor 806 in the electrical insulation layer 801 are mounted by the mounting process in normal module preparation, it mounts on both sides of the wiring board 808, and it becomes easy by increasing a component interior layer. That is, the electronic component 810 and the semiconductor 811 are connected to the upper side of the three-layer wiring board 808 through the wiring pattern 802, and the electrical insulation layer in which the electronic component is embedded is also placed below the three-layer wiring board 808. It connected and the electronic component 812 was connected to the surface.
    [87] Thereby, the number of parts which can be mounted in the same area can be increased, and it can be set as the structure suitable for higher density mounting.
    [88] (Embodiment 9)
    [89] In the ninth embodiment, an embodiment of a component built-in module will be described. EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described with reference to FIG. The component built-in module in this embodiment is the same as that of Embodiments 1-8 mentioned above except the thinning of a semiconductor. Therefore, in this embodiment, if there is no description in particular, it is the same as that of Embodiments 1-8, and unless otherwise indicated about the structural member and manufacturing method of the same name, it has the same function.
    [90] By thinning the semiconductor 906, the thickness of the component built-in module can be reduced. For thinning, a method of polishing and mounting a semiconductor wafer, or a method of grinding and polishing the semiconductor 906 after mounting the wiring board 908 can be used. In the former case, since the semiconductor 906 can be processed in units of wafers, there is an advantage in productivity. In the latter case, since the need to handle the thinned semiconductor 906 becomes unnecessary, fishability improves. The semiconductor 906 may be not only in surface mount but also inside.
    [91] (Embodiment 10)
    [92] In this tenth embodiment, an embodiment of a component built-in module will be described. EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described with reference to FIG. The component built-in module in this embodiment is the same as that of Embodiments 1-9 mentioned above except that a shield electrode is formed. Therefore, in this embodiment, if there is no description in particular, it is the same as that of Embodiments 1-9, and has the same function unless there is particular notice about the structural member and manufacturing method of the same name. 1009 is an ACF.
    [93] The shield electrode 1010 can be formed of the same material and process as the wiring pattern 1002. By forming the shield electrode 1010, interference of electromagnetic waves between the embedded semiconductor 1006 and the electronic component 1004 can be reduced. The module can be stabilized by setting the shield electrode 1010 at a ground potential. In addition, a shield electrode is not limited to one layer.
    [94] (Embodiment 11)
    [95] In this eleventh embodiment, an embodiment of a component built-in module will be described. EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described with reference to FIG. The component built-in module in this embodiment is the same as that of Embodiments 1-10 mentioned above except that the electron shield layer 1110 is formed. Therefore, in this embodiment, the thing which does not have description in particular is the same as that of Embodiment 1-10, and has the same function unless there is particular notice about the structural member and manufacturing method of the same name.
    [96] The electromagnetic shield layer 1110 can reduce the interference of electromagnetic waves between the semiconductor 1106 and the electronic component 1104 incorporated only by changing the filler of the electrical insulation layer 1101. As the filler, a material having a high permeability complex component and absorbing radio waves (converted into heat) can be used. For example, ferrite powder or the like can be used. The shield function can be added in the same process as the electrical insulation layer 1101. In addition, an electron shield layer is not limited to one layer.
    [97] (Embodiment 12)
    [98] In this twelfth embodiment, an embodiment of a component built-in module will be described. EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described with reference to FIG. The component built-in module in this embodiment is the same as that of Embodiments 1-11 mentioned above except the electronic component 1204a, 1204b in the electrical insulation layer 1201. Therefore, in this embodiment, the thing which does not have description in particular is the same as that of Embodiment 1-11, and has the same function unless there is particular notice about the structural member and manufacturing method of the same name.
    [99] The electronic components 1204a and 1204b in the electrical insulation layer 1201 are mounted in the same mounting process as in the fourth module in the same manner as in the fourth embodiment, but the size of the electronic components is not uniform due to, for example, the capacity of the capacitor. Often not. In this embodiment, the difference in the heights of the electronic components 1204a and 1204b is effectively used to improve the mounting density. As shown in FIG. 12, components of the electronic component 1204a having a low height are mounted to face each other, and the upper space of the electronic component 1204a which is normally wasted can be effectively used to obtain a structure suitable for higher density mounting.
    [100] The surface-mounted electronic component 1204 and the semiconductor 1206 can be mounted in the same process as the normal module making, and by increasing the mounting surface, the electronic component 1204 and the semiconductor 1206 can be mounted more densely, resulting in a structure suitable for a multifunctional module.
    [101] As described above, according to the present invention, an electrical insulating layer, wiring patterns formed on both main planes of the electrical insulating layer, vias connecting the wiring patterns, and electronic components mounted on the wiring patterns and / or By using the semiconductor module as a component built-in module disposed inside the electrical insulation layer, it is possible to provide a component built-in module in which electronic components and / or semiconductors are embedded in the electrical insulation layer and which are thin and mounted at a high density.
    [102] (Example 1)
    [103] In the present Example, the electrical insulation layer was produced with the following process. A thermosetting liquid epoxy resin and SiO 2 were used as the filler, the amount of the filler was determined on a scale at a proportion of 70% by mass, and a mixed paste was produced by a stirring mixer. The produced mixed paste was processed into a sheet shape having a thickness of 700 µm by a doctor blade method on a release film (thickness: 75 µm) of polyethylene terephthalate (PET). After processing to a sheet shape, an electrical insulating layer in an uncured state was passed through a drying step at 105 ° C. The mass ratio of the liquid epoxy resin and the filler can be selected to be 96% or less (mass ratio of the filler) capable of maintaining the shape of the sheet. Although the thickness of a sheet | seat is 200 micrometers or less which are easy to perform a drying process, it is desirable, but a desired thickness can be obtained by forming a thick sheet according to the height of the component to be built, or laminating | stacking after sheet formation.
    [104] Next, a through hole (diameter) is used at a position corresponding to the internal via using a carbon gas laser. 150 μm). After through-hole formation, via paste, which is a mixture of copper powder (particle diameter: less than 7 μm) and the thermosetting epoxy resin, was printed and filled. At the time of printing charge, a squeegee was used and PET film was used as a mask. The smaller through hole diameter is suitable for high density mounting, and a size of 600 µm or less can be used practically.
    [105] In parallel with the above process, a photoresist film was attached by a laminator to a 15 μm thick copper foil (one side roughened) attached to a PET carrier film (thickness: 75 μm) with an adhesive, and was exposed to ultraviolet light, development, and chloride. The wiring pattern was formed by etching using ferric iron. As the wiring design rule, the minimum L / S (line / paste) was set to 100/100 (µm). The smaller L / S is also suitable for high-density mounting, and 200/200 µm or less is appropriate when mounting a semiconductor bare chip.
    [106] Electronic components and / or semiconductors were mounted on the wiring patterns. A conductive adhesive was used for mounting the electronic component. The electrically conductive adhesive was apply | coated on the wiring pattern with the screen board (mesh: # 400 / inch), the electronic component of 1005 size was arrange | positioned, and it hardened with the dryer (temperature: 150 degreeC). As electronic components, chip components such as LCR, thermistors, and diodes were used depending on the modules to be configured. The smaller the size of the electronic component to be incorporated is also suitable for high-density packaging, and preferably 1.6 mm or less (3216 size). In the case of a package, the mounting of a semiconductor used the conductive adhesive similarly to an electronic component. In the case of a bare chip, gold bumps were formed and flip chip mounted. Moreover, the electronic component and / or the semiconductor were similarly mounted in the wiring board. In the case of a wiring board, the solder mounting was used for the mounting of an electronic component.
    [107] The mounted electronic component was inspected for external appearance and repaired at the point where the mounting miss (part dropping or component rise) occurred. The mounted semiconductor was also confirmed by the electrical connection check. Thereafter, the functional inspection of the circuit block was performed, and the characteristics of the semiconductor itself were also confirmed. The location of the characteristic defect was replaced with parts.
    [108] The electrical insulation layer and the wiring pattern which mounted the electronic component and / or the semiconductor which were produced at the said process were aligned, laminated | stacked, and pressed (5 Mpa) based on the recognition mark. By pressurization, the electrical insulation layer, the electronic component, and / or the semiconductor were embedded in the electrical insulation layer. After embedding, the mixture was heated at a temperature of 200 ° C. and a time of 2 hours while being pressurized at the same pressure to cure the electrical insulating layer. Wiring patterns were also transferred at the same time as the electrical insulation layer was cured.
    [109] After curing of the electrical insulation layer, the PET carrier was peeled off to form a component embedded module. This component built-in module has a space for mounting electronic components and / or semiconductors on the surface layer, and electronic components and / or semiconductors are also arranged inside the component built-in module. Compared with the same area, the module of this embodiment can mount about twice as many components. Conversely, when mounting the same number of parts as a normal two-dimensional (surface) package, the module of this embodiment is about half the size.
    [110] (Example 2)
    [111] In the present Example, the sample was produced in the structure as shown in FIG. Wiring boards are arranged above and below the electrical insulation layer incorporating electronic components, and are connected between the wiring boards above and below through vias. As the electronic component, a chip component having a size of 0603 was used. Electrical insulating layer was produced in the sample was varied by the thermal expansion coefficient, and adjusting the mass ratio of SiO 2 as a filler. The thickness of the electrical insulation layer is 400 μm. As the wiring board, a glass epoxy substrate (A substrate) and a wiring board (B substrate) formed of the same material as that of the electrical insulation layer were used. Via is a mixture of copper powder and resin. Table 1 shows the thermal expansion coefficients of the vias, the electrical insulation layer (electric insulation layer only), and the electrical insulation layer of the structure.
    [112] Sample No. and Thermal Expansion Rate (Unit: ppm) Sample No.One2345678910 Wiring boardABABABABAB Via30 Electrical insulation layer only2047100150200 Structure of electrical insulation layer43179845190101301155488200 Electrical insulation layer / via1.430.573.271.506.333.3710.05.1716.36.67
    [113] As a wiring board, the thermal expansion coefficient at the time of becoming a structure differs in the glass epoxy board | substrate (A board | substrate) and the board | substrate (B board | substrate) formed from the same material as an electrical insulation layer. Since the electrical insulation layer and the B board | substrate do not contain a reinforcing material, they show an isotropic thermal expansion rate in the XYZ direction, but the glass epoxy substrate has a very different thermal expansion rate in the XY direction and the Z direction because of the glass cross. The thermal expansion coefficient of the A substrate was a material of 10 ppm in the XY direction and 150 ppm in the Z direction. In the case of a structure, since the electrical insulation layer is fixed to the wiring board, the XY direction is forcibly fixed to the wiring board (A substrate) having a high Young's modulus. Therefore, it cannot extend in XY direction and the thermal expansion rate of Z direction will increase. In the case where the B substrate, which is the same material, is used for the wiring board, of course, the thermal expansion coefficient does not change. The resistance value (open number) of the via when the produced sample was subjected to the heat cycle test (-50 degreeC-270 degreeC) was investigated (Table 2).
    [114] Sample No.One2345678910 Electrical Insulation Layer / Via1.430.573.271.506.333.3710.05.1716.36.67 Open number (/ 1000)000One0002195One
    [115] As a result of the experiment, many open occurred in the sample of Sample No.9. This is considered to be due to the difference between the thermal expansion rate of the via and the thermal expansion rate of the electrical insulation layer. Even if the electrical insulation layer is made of the same material, the difference in thermal expansion rate when the structure becomes a structure affects the reliability of the vias, and a highly reliable component built-in module can be provided by setting the ratio of thermal expansion ratio to 10 times or less.
    [116] According to the present invention, it is possible to provide a component built-in module capable of mounting inspection or property inspection of a component such as a semiconductor before embedding, improving yield, increasing strength, high productivity, and high density mounting.
    权利要求:
    Claims (24)
    [1" claim-type="Currently amended] Electrical insulation layer; And
    A wiring integrated on both surfaces of the electrical insulation layer, and a via connecting the wiring;
    A component built-in module in which at least one component selected from an electronic component and a semiconductor is embedded in the electrical insulation layer,
    At least one of the wirings is a wiring formed on the surface of the wiring board,
    And the component embedded in the electrical insulation layer is mounted on and integrated with the wiring board before being embedded.
    [2" claim-type="Currently amended] The method of claim 1,
    The at least one component selected from an electronic component and a semiconductor is mounted on the outer main plane of the wiring board.
    [3" claim-type="Currently amended] The method of claim 1,
    And said wiring board is at least one substrate selected from a double-sided wiring board and a multilayer wiring board.
    [4" claim-type="Currently amended] The method of claim 1,
    And at least one inspection selected from a mounting inspection and a characteristic inspection before the component is embedded in the electrical insulation layer.
    [5" claim-type="Currently amended] The method of claim 1,
    A component built-in module, wherein the component is disposed away from the cross-sectional direction of the electrical insulation layer.
    [6" claim-type="Currently amended] The method of claim 1,
    A component built-in module, disposed within the electrical insulation layer, wherein a shield layer is inserted between at least one of the components mounted on the wiring boards on both main planes of the electrical insulation layer.
    [7" claim-type="Currently amended] The method of claim 6,
    And said shield layer is a metal foil wiring pattern or an electronic shield material.
    [8" claim-type="Currently amended] The method of claim 1,
    Component built-in module, characterized in that the electronic component is a discrete component.
    [9" claim-type="Currently amended] The method of claim 1,
    And the semiconductor is a semiconductor bare chip.
    [10" claim-type="Currently amended] The method of claim 9,
    And said semiconductor bare chip is flip chip bonded to said wiring pattern.
    [11" claim-type="Currently amended] The method of claim 9,
    And said semiconductor bare chip is ground or polished.
    [12" claim-type="Currently amended] The method of claim 1,
    A component built-in module, wherein the component is disposed to face the inside of the electrical insulation layer.
    [13" claim-type="Currently amended] The method of claim 1,
    And a thermal expansion coefficient in the thickness direction of the electrical insulation layer is 10 times or less of the thermal expansion coefficient of the via.
    [14" claim-type="Currently amended] The method of claim 1,
    The said electrical insulation layer contains resin and a filler, and a filler content is 50 mass% or more and 95 mass% or less, The component built-in module characterized by the above-mentioned.
    [15" claim-type="Currently amended] An electrical insulation layer, wirings integrated on both surfaces of the electrical insulation layer, and vias connecting the wirings;
    In the manufacturing method of a component built-in module in which at least 1 component selected from an electronic component and a semiconductor is embedded in the said electrical insulation layer,
    At least one of the wirings is wirings formed on the surface of the wiring board;
    Mounting at least one component selected from a conductor and an electronic component on the wiring board;
    Forming vias in the thickness direction of the electrical insulating layer made of a thermosetting resin in a semi-cured state;
    Embedding the component in the electrical insulation layer with the wiring board facing out; And
    And hardening the electrical insulation layer.
    [16" claim-type="Currently amended] The method of claim 15,
    And at least one inspection selected from a mounting inspection and a characteristic inspection is completed before the step of embedding the component inside the electrical insulation layer.
    [17" claim-type="Currently amended] The method of claim 15,
    A method for manufacturing a component built-in module, wherein the wiring board is integrated on both surfaces of the electrical insulation layer.
    [18" claim-type="Currently amended] The method of claim 15,
    A method for manufacturing a component built-in module, wherein the component is mounted on both surfaces of the at least one wiring board.
    [19" claim-type="Currently amended] The method of claim 15,
    And forming a shield layer on the electrical insulation layer between the via forming step and the embedding step of the component.
    [20" claim-type="Currently amended] The method of claim 19,
    The said shield layer is performed by forming a copper foil wiring pattern, The manufacturing method of the component built-in module characterized by the above-mentioned.
    [21" claim-type="Currently amended] The method of claim 19,
    The said shield layer is performed by laminating an electron shield layer, The manufacturing method of the component built-in module characterized by the above-mentioned.
    [22" claim-type="Currently amended] The method of claim 15,
    A method for manufacturing a component built-in module, wherein the semiconductor is ground or polished with a semiconductor wafer before mounting.
    [23" claim-type="Currently amended] The method of claim 15,
    And manufacturing or polishing the semiconductor after mounting the semiconductor.
    [24" claim-type="Currently amended] The method of claim 15,
    And embedding at least one selected from the semiconductor and the electronic component in the electrical insulation layer, and simultaneously curing the electrical insulation layer.
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    同族专利:
    公开号 | 公开日
    EP1304742A2|2003-04-23|
    CN1418048A|2003-05-14|
    EP1304742B1|2009-06-10|
    EP1304742A3|2006-03-29|
    EP2056349A1|2009-05-06|
    US20050269681A1|2005-12-08|
    TW550997B|2003-09-01|
    US6975516B2|2005-12-13|
    US7294587B2|2007-11-13|
    JP2008294475A|2008-12-04|
    CN1293790C|2007-01-03|
    DE60232572D1|2009-07-23|
    JP4272693B2|2009-06-03|
    US20030090883A1|2003-05-15|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2001-10-18|Priority to JPJP-P-2001-00320704
    2001-10-18|Priority to JP2001320704
    2002-10-18|Application filed by 마쯔시다덴기산교 가부시키가이샤
    2003-04-26|Publication of KR20030032892A
    优先权:
    申请号 | 申请日 | 专利标题
    JPJP-P-2001-00320704|2001-10-18|
    JP2001320704|2001-10-18|
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